Planar Tunnel Diode Detector
DT Series • 100 MHz to 26.5 GHz
No Polarization Extremely low video output resistance (typ. 125 ohms)
Extremely fast impulse response (typ. 5 ns rise time)
High reliability hermetically sealed modules
Excellent frequency response
Excellent dynamic range and output sensitivity voltage charged
Maximum input power: + 17dBm
Operating temperature range: -55 ° C to + 90 ° C
Storage temperature range: -65 ° C to + 125 ° C
Specification @ + 25 ° C and -20 dBm of power connectorized and drop-in
EZM & EZR Series • 10 MHz to 26.5 GHz
No polarization EZM Series
Extremely flat frequency response
EZR series
High voltage output sensitivity
Flat frequency response
Maximum input power: 100mW CW
Operating temperature range: 0 ° C to + 90 ° C
Temperature range of storage: -65 ° C to + 125 ° C
Specification @ + 25 ° C and -20 dBm input power
Connected and drop-in
Polarized Shottky Diode Detector
ESS Series • 100 MHz to 26.5 GHz
High dynamic range @ 100 µA
Typical bias Flat response and high sensitivity
Ultra wide band and ultra fast
Low video output resistance (350 ohms typically)
High reliability hermetically sealed modules
Maximum input power: +23 dBm
Temperature of operating: 0 ° C to + 50 ° C
Storage temperature range: -65 ° C to + 125 ° C
Specification @ + 25 ° C and -20 dBm
Input power
Connectorized and drop-in
Threshold detectorTh series • 100 MHz to 20 GHz
Module High reliability hermetically sealed 10 dB dynamic range: -20 dBm to -10 dBm (see note 2)
Propagation delay: 10 nsec typical TTL logic output
Minimum pulse width: 50 nsec typical
Temperature stability: 1.0 dB, 3 dB above the threshold Internal or external voltage threshold adjustment
Continuous current (no load): ± 5 VDC @ 100mA max
Maximum input power: +20 dBm
Operating temperature range: -55 ° C to + 90 ° C
Temperature range from storage: -65 ° C to + 125 ° C
Specification @ + 25 ° C
Connectorized and drop-in
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